• 1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p
  • 1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p
  • 1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p
  • 1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p
  • 1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p
  • 1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p

1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p

Manufacturing Technology: Discrete Device
Material: Sic
Type: N-type Semiconductor
Samples:
US$ 0.15/Piece 1 Piece(Min.Order)
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Mosfet
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1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
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Basic Info.

Model NO.
DHC2M016120D
Package
to-3p
Application
Solar Inverters
Model
Dhc2m016120d
Batch Number
2022
Brand
Wxdh
Voltage
1200V
Current
115A
Transport Package
Tube
Specification
Sic
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p
115A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required. It is qualified
and manufactured on the productive 6 inch SiC line in
China fully owned by DongHai Semiconducor.
 
Features
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitance
Easy to Parallel and Simple to Drive
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL VALUE UNIT
     
Drian-to-Source Voltage VDSS 1200 V
Gate-to-Source Voltage max VGSS -10/+25 V
Gate-to-Source Voltage max VGSS -5/+20 V
Continuous Drain Current ID TC=25ºC 115 A
TC=100ºC 85 A
Pulsed Drain Current IDM TBD A
Power Dissipation Tj=150ºC Ptot TBD W
TC=25ºC Ptot W
Junction Temperature Range Tj -40~175 ºC
Storage Temperature Range Tstg -40~175 ºC
 
4.2 Thermal Characteristics
Parameter Symbol Rating Unitº
Thermal Resistance,Junction to Case-sink RthJC 0.28 ºC/W

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DHC1M016120D TO-3P DHC1M016120D Pb-free Tube 300/box
DHC1M016120B TO-247 DHC1M016120 Pb-free Tube 300/box
 1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p

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From payment to delivery, we protect your trading.
1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p pictures & photos
1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

Suppliers with verified business licenses

Secured Trading Service
Manufacturer/Factory & Trading Company
Number of Employees
156
Year of Establishment
2004-12-07