1200V 115A N-Channel Sic Power Mosfet Dhc2m016120d to-3p

• Customization: Available
• Application: Solar Inverters
• Batch Number: 2022
• Model NO.: DHC2M016120D
• Manufacturing Technology: Discrete Device
• Material: Sic
• Model: Dhc2m016120d
• Package: to-3p
• Type: N-Type Semiconductor
• Voltage: 1200V
• Current: 115A
• Brand: Wxdh
• Transport Package: Tube
• Specification: Sic
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541100000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

115A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required. It is qualified
and manufactured on the productive 6 inch SiC line in
China fully owned by DongHai Semiconducor.
 

Features

High Blocking Voltage with Low On-Resistance

High Speed Switching with Low Capacitance

Easy to Parallel and Simple to Drive

Applications

Power Supplies

High Voltage DC/DC Converters

Motor Drives

Switch Mode Power Supplies

Pulsed Power applications

 

PARAMETER			SYMBOL	VALUE		UNIT
Drian-to-Source Voltage			VDSS	1200		V
Gate-to-Source Voltage max			VGSS	-10/+25		V
Gate-to-Source Voltage max			VGSS	-5/+20		V
Continuous Drain Current			ID TC=25ºC	115		A
			TC=100ºC	85		A
Pulsed Drain Current			IDM	TBD		A
Power Dissipation		Tj=150ºC	Ptot	TBD		W
		TC=25ºC	Ptot			W
Junction Temperature Range			Tj	-40~175		ºC
Storage Temperature Range			Tstg	-40~175		ºC

 
4.2 Thermal Characteristics

Parameter	Symbol	Rating	Unitº
Thermal Resistance,Junction to Case-sink	RthJC	0.28	ºC/W

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DHC1M016120D	TO-3P	DHC1M016120D	Pb-free	Tube	300/box
DHC1M016120B	TO-247	DHC1M016120	Pb-free	Tube	300/box