| Customization: | Available |
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| Voltage: | 600V |
| Current: | 7.5A |
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| Description |
| These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. |
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| 8N60/I8N60/E8N60/B8N60/D8N60 | F8N60 | ||||
| Maximum Drian-Source DC Voltage | VDS | 600 | V | ||
| Maximum Gate-Drain Voltage | VGS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 7.5 | A | ||
| (T=100ºC) | 4.8 | A | |||
| Drain Current(Pulsed) | IDM | 30 | A | ||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ||
| Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
| TC=25ºC | Ptot | 100 | 35 | W | |
| Junction Temperature | Tj | 150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Fast Switching |
| ESD Improved Capability |
| Low ON Resistance(Rdson≤1.3Ω) |
| Low Gate Charge(Typ: 24nC) |
| Low Reverse Transfer Capacitances(Typ: 5.5pF) |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| used in various power switching circuit for system miniaturization and higher efficiency. |
| Power switch circuit of electron ballast and adaptor. |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| 8N60 | TO-220C | 8N60 | Pb-free | Tube | 1000/box |
| F8N60 | TO-220F | F8N60 | Pb-free | Tube | 1000/box |
| B8N60 | TO-251 | B8N60 | Pb-free | Tube | 3000/box |
| D8N60 | TO-252 | D8N60 | Pb-free | Tape & Reel | 2500/box |
| I8N60 | TO-262 | I8N60 | Pb-free | Tube | 1000/box |
| E8N60 | TO-263 | E8N60 | Pb-free | Tape & Reel | 800/box |
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