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10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252

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Product Details
Customization: Available
Application: Diode, Switching Mode Power Supplies
Batch Number: 2023
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Year of Establishment
2004-12-07
Number of Employees
234
  • 10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252
  • 10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252
  • 10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252
  • 10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252
  • 10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252
  • 10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252
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Basic Info.

Model NO.
DCD10D120G4
Manufacturing Technology
Discrete Device
Material
Silicon
Model
Dcd10d120g4
Package
to-252
Type
N-Type Semiconductor
Voltage
1200V
Current
10A
Brand
Wxdh
Transport Package
Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-25210A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-25210A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-25210A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252
25A 1700V SiC Schottky Barrier Diode

1 Description
SiC Series products family offers state of the art performance. It is designed for high
frequency applications where high efficiency and high reliability are required.
 
Features
high voltage
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Positive Temperature Coefficient on VF
175ºC Operating Junction Temperature
Applications
Switching Mode Power Supplies
Power Factor Correction
Motor drive, PV inverter, wind power station
 
PARAMETER SYMBOL VALUE UNIT
 
Peak Repetitive Reverse Voltage VRRM 1200 V
Working Peak Reverse Voltage VRWM 1200 V
DC Blocking Voltage VR 1200 V
 Forward Current (Tc≤25ºC) IF 25  
(Tc≤135ºC) 13 A
(Tc≤148ºC)
10
Repetitive Peak Forward Surge Current (t=8.3ms) IFSM 90 A
Power dissipation Ptot 125 W
Operating Junction Temperature Range Tj -55~175 ºC
Storage Temperature Range Tstg -55~175 ºC
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name
DCD10D120G4
TO-252
DCD10D120G4
 10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252

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