68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L

Product Details
Customization: Available
Application: Power Supplies
Batch Number: 2023
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Number of Employees
234
Year of Establishment
2004-12-07
  • 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L
  • 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L
  • 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L
  • 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L
  • 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L
  • 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L
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Basic Info.

Model NO.
DCC040M120A2
Manufacturing Technology
Discrete Device
Material
Sic
Model
Dcc040m120A2
Package
to-247-3L
Type
N-Type Semiconductor
Voltage
1200V
Current
68A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L
 68A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL Test Conditions VALUE UNIT
     
Drian-to-Source Voltage VDSmax VGS=0V, ID=100μA 1200 V
Gate-to-Source Voltage max VGSmax Absolute maximum values -8/+22 V
Gate-to-Source Voltage max VGSS Recommended operational values -4/+18 V
Continuous Drain Current ID TC=25ºC VGS=18V,TC=25ºC 68 A
TC=100ºC VGS=18V,TC=100ºC 49 A
Pulsed Drain Current IDM Pulse width tp limited by TJmax 100 A
Power Dissipation   Ptot Tc=25ºC, TJ=150ºC 340 W
  Ptot Tc=25ºC, TJ=150ºC W
Junction Temperature Range Tj   -55~175 ºC
Storage Temperature Range Tstg   -55~175 ºC
 
4.2 Thermal Characteristics
Parameter Symbol Rating Unitº
Thermal Resistance,Junction to Case-sink RthJC 0.44 ºC/W
Thermal Resistance,Junction to Ambient RthJA 40 ºC/W

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DCC040M120A2 TO-247-3L DCC040M120A2 Pb-free Tube 300/box
DCCF040M120A2 TO-247-4L DCCF040M120A2 Pb-free Tube 300/box
 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L

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