


68A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
| Features |
| Higher System Efficiency |
| Reduced Cooling Requirements |
| Increased Power Density |
| Increased System Switching Frequency |
| Applications |
| Power Supplies |
| High Voltage DC/DC Converters |
| Motor Drives |
| Switch Mode Power Supplies |
| Pulsed Power applications |
| PARAMETER |
SYMBOL |
Test Conditions |
VALUE |
UNIT |
| |
|
|
| Drian-to-Source Voltage |
VDSmax |
VGS=0V, ID=100μA |
1200 |
V |
| Gate-to-Source Voltage max |
VGSmax |
Absolute maximum values |
-8/+22 |
V |
| Gate-to-Source Voltage max |
VGSS |
Recommended operational values |
-4/+18 |
V |
| Continuous Drain Current |
ID TC=25ºC |
VGS=18V,TC=25ºC |
68 |
A |
| TC=100ºC |
VGS=18V,TC=100ºC |
49 |
A |
| Pulsed Drain Current |
IDM |
Pulse width tp limited by TJmax |
100 |
A |
| Power Dissipation |
|
Ptot |
Tc=25ºC, TJ=150ºC |
340 |
W |
| |
Ptot |
Tc=25ºC, TJ=150ºC |
W |
| Junction Temperature Range |
Tj |
|
-55~175 |
ºC |
| Storage Temperature Range |
Tstg |
|
-55~175 |
ºC |
4.2 Thermal Characteristics
| Parameter |
Symbol |
Rating |
Unitº |
| Thermal Resistance,Junction to Case-sink |
RthJC |
0.44 |
ºC/W |
| Thermal Resistance,Junction to Ambient |
RthJA |
40 |
ºC/W |
| Product Specifications and Packaging Models |
| Product Model |
Package Type |
Mark Name |
RoHS |
Package |
Quantity |
| DCC040M120A2 |
TO-247-3L |
DCC040M120A2 |
Pb-free |
Tube |
300/box |
| DCCF040M120A2 |
TO-247-4L |
DCCF040M120A2 |
Pb-free |
Tube |
300/box |