7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b

• Application: Power Switching Circuit
• Batch Number: 2022
• Manufacturing Technology: Discrete Device
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DHD7N65
• Material: Metal-Oxide Semiconductor
• Model: DHD7n65
• Package: to-252b
• Type: N-Type Semiconductor
• Voltage: 650V
• Current: 7A
• Brand: Wxdh
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE	UNIT
Maximum Drian-Source DC Voltage		VDS	650	V
Maximum Gate-Drain Voltage		VGS	±30	V
Drain Current(continuous)		ID(T=25ºC)	7	A
		(T=100ºC)	4.4	A
Drain Current(Pulsed)		IDM	28	A
Single Pulse Avalanche Energy		EAS	350	mJ
Total Dissipation	Ta=25ºC	Ptot	0.8	W
	TC=25ºC	Ptot	100	W
Junction Temperature		Tj	-55~150	ºC
storage Temperature		Tstg	-55~150	ºC

 

Features

Fast Switching

ESD improved capability

Low on resistance(Rdson≤2.3Ω)

Low gate charge(Typ: 24nC)

Low reverse transfer capacitances(Typ: 5.5pF)

100% Single Pulse Avalanche Energy Test

100% ΔVDS Test

Applications

Used in various power switching circuit for system miniaturization and higher efficiency.

Power switch circuit of adaptor and charger.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DHD7N65	TO-252B	DHD7N65	Pb-free	REEL	5000/box