700V 10A N-Channel Enhancement Mode Power Mosfet F10n70 to-220f

• Voltage: 700V
• Current: 10A
• Manufacturing Technology: Discrete Device
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: F10N70
• Type: N-type Semiconductor
• Material: Metal-Oxide Semiconductor
• Package: to-220f
• Application: Power Switching Circuit
• Model: F10n70
• Batch Number: 2022
• Brand: Wxdh
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			10N70/I10N70/E10N70	F10N70
Maximum Drian-Source DC Voltage		VDS	700		V
Maximum Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	10		A
		(T=100ºC)	6.3		A
Drain Current(Pulsed)		IDM	40		A
Single Pulse Avalanche Energy		EAS	500		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	130	40	W
Junction Temperature		Tj	150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

Low ON Resistance (Rdson≤1.1Ω)

Low Gate Charge(Typ: 32nC)

Low Reverse Transfer Capacitances(Typ: 7pF)

100% Single Pulse Avalanche Energy Test

100% ΔVDS Test

Applications

Used in various power switching circuit for system miniaturization and higher efficiency.

Power switch circuit of adaptor and charger.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
10N70	TO-220C	10N70	Pb-free	Tube	1000/box
F10N70	TO-220F	F10N70	Pb-free	Tube	1000/box
I10N70	TO-262	I10N70	Pb-free	Tube	1000/box
E10N70	TO-263	E10N70	Pb-free	Tape & Reel	800/box