600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: F20N60
• Package: to-220f
• Application: Power Switching Circuit
• Model: F20n60
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 600V
• Current: 20A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE			UNIT
			20N60	F20N60	20N60D
Maximum Drian-Source DC Voltage		VDS	600			V
Maximum Gate-Drain Voltage		VGS	±30			V
Drain Current(continuous)		ID(T=25ºC)	20			A
		(T=100ºC)	14			A
Drain Current(Pulsed)		IDM	80			A
Single Pulse Avalanche Energy		EAS	1200			mJ
Peak Diode Recovery dv/dt		dv/dt	5			V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	3	W
	TC=25ºC	Ptot	250	85	250	W
Junction Temperature		Tj	-55~150			ºC
storage Temperature		Tstg	-55~150			ºC

 

Features

Fast Switching

Low ON Resistance(Rdson≤0.45Ω)

Low Gate Charge(Typ: 61nC)

Low Reverse Transfer Capacitances(Typ: 20pF)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Used in various power switching circuit for system
miniaturization and higher efficiency.

Power switch circuit of adaptor and charger.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
20N60	TO-220C	20N60	Pb-free	Tube	1000/box
F20N60	TO-220F	F20N60	Pb-free	Tube	1000/box
20N60D	TO-3PN	20N60D	Pb-free	Tube	600/box