650V 4A N-Channel Enhancement Mode Power Mosfet D4n65 to-252

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: D4N65
• Package: to-252b
• Application: Power Switch Circuit
• Model: D4n65
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 650V
• Current: 4A
• Transport Package: Tape & Reel
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			4N65/I4N65/E4N65/B4N65/D4N65	F4N65
Drian-Source Voltage		VDSS	650		V
Gate-to-Source Voltage		VGSS	±30		V
Drain Current(continuous)		ID(T=25ºC)	4		A
		(T=100ºC)	2.6		A
Drain Current(Pulsed)		IDM	16		A
Single Pulse Avalanche Energy		EAS	200		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	75	30	W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

ESD improved capability

Low ON Resistance(Rdson≤2.8Ω)

Low Gate Charge(Typ: 14.5nC)

Low Reverse Transfer Capacitances(Typ: 3.5pF)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Used in various power switching circuit for system miniaturization and higher efficiency.

Power switch circuit of adaptor and charger.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
4N65	TO-220C	4N65	Pb-free	Tube	1000/box
F4N65	TO-220F	F4N65	Pb-free	Tube	1000/box
B4N65	TO-251	B4N65	Pb-free	Tube	3000/box
D4N65	TO-252	D4N65	Pb-free	Tape & Reel	2500/box
I4N65	TO-262	I4N65	Pb-free	Tube	1000/box
E4N65	TO-263	E4N65	Pb-free	Tape & Reel	800/box