


30mΩ 650V N-channel SiC Power MOSFET
Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required.
| Features |
|
Higher System Efficiency
|
|
Reduced Cooling Requirements
|
|
Increased Power Density
|
|
Increased System Switching Frequency
|
| Applications |
| Power Supplies |
| High Voltage DC/DC Converters |
| Motor Drives |
| Switch Mode Power Supplies |
| Pulsed Power applications |
| PARAMETER |
SYMBOL |
VALUE |
UNIT |
| |
| Drian-to-Source Voltage |
VDSS |
650 |
V |
| Gate-to-Source Voltage max |
VGSS |
-8/+22 |
V |
| Gate-to-Source Voltage max |
VGSS |
-4/+18 |
V |
| Continuous Drain Current |
VGS=20V,TC=25ºC
|
63 |
A |
|
VGS=20V,TC=100ºC
|
45 |
A |
| Pulsed Drain Current |
ID(PULSE) |
197 |
A |
| Power Dissipation |
Tj=175ºC |
PD |
187 |
W |
| TC=25ºC |
PD |
W |
| Junction Temperature Range |
Tj |
-40~175 |
ºC |
| Storage Temperature Range |
Tstg |
-40~175 |
ºC |
4.2 Thermal Characteristics
| Parameter |
Symbol |
Rating |
Unitº |
| Thermal Resistance,Junction to Case-sink |
RthJC |
0.8 |
ºC/W |
| Product Specifications and Packaging Models |
| Product Model |
Package Type |
Mark Name |
RoHS |
Package |
Quantity |
| DCC030M65G2 |
TO-247-3L |
DCC030M65G2 |
Pb-free |
Tube |
300/box |