| Customization: | Available |
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| Manufacturing Technology: | Discrete Device |
| Type: | N-Type Semiconductor |
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| PARAMETER | SYMBOL | VALUE | UNIT | ||
| Drian-to-Source Voltage | VDSS | 100 | V | ||
| Gate-to-Source Voltage | VGSS | ±20 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 47 | A | ||
| (T=100ºC) | 33 | A | |||
| Drain Current(Pulsed) | IDM | 188 | A | ||
| Single Pulse Avalanche Energy | EAS | 150 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 2 | W | |
| TC=25ºC | Ptot | 35 | W | ||
| Junction Temperature | Tj | -55~175 | ºC | ||
| storage Temperature | Tstg | -55~175 | ºC | ||
| Features |
| Fast Switching |
| Low ON Resistance |
| Low Gate Charge |
| Low Reverse Transfer Capacitances |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Power switching applications |
| DC-DC converterst |
| Full bridge control |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
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DHS180N10LF
|
TO-220F |
DHS180N10LF
|
Pb-free | Tube | 1000/box |
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