• 120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247
  • 120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247
  • 120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247
  • 120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247
  • 120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247
  • 120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247

120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247

Manufacturing Technology: Discrete Device
Material: Sic
Type: N-type Semiconductor
Samples:
US$ 0.55/Piece 1 Piece(Min.Order)
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Mosfet
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120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247 pictures & photos
120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247
US $0.01-0.2 / Piece
Min. Order: 5,000 Pieces
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Basic Info.

Model NO.
DCC016M120G2/DCCF016M120G2
Package
to-247-3L
Signal Processing
Other
Application
Power Supplies
Model
Dcc016m120g2
Batch Number
2023
Brand
Wxdh
Voltage
1200
Current
120A
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247
 115A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
 120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL Test Conditions VALUE UNIT
     
Drian-to-Source Voltage VDSmax VGS=0V, ID=100μA 1200 V
Gate-to-Source Voltage max VGSmax Absolute maximum values -8/+22 V
Gate-to-Source Voltage max VGSS Recommended operational values -4/+18 V
Continuous Drain Current ID TC=25ºC VGS=18V,TC=25ºC 120 A
TC=100ºC VGS=18V,TC=100ºC 85 A
Pulsed Drain Current IDM Pulse width tp limited by TJmax 250 A
Power Dissipation   Ptot Tc=25ºC, TJ=175ºC 375 W
  Ptot Tc=25ºC, TJ=175ºC W
Junction Temperature Range Tj   -55~175 ºC
Storage Temperature Range Tstg   -55~175 ºC
 
4.2 Thermal Characteristics
Parameter Symbol Rating Unitº
Thermal Resistance,Junction to Case-sink RthJC 0.23 ºC/W
Thermal Resistance,Junction to Ambient RthJA 40 ºC/W

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DCC016M120G2 TO-247-3L DCC016M120G2 Pb-free Tube 300/box
DCCF016M120G2 TO-247-4L DCCF016M120G2 Pb-free Tube 300/box
 120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247

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From payment to delivery, we protect your trading.
120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247 pictures & photos
120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247
US $0.01-0.2 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

Suppliers with verified business licenses

Secured Trading Service
Manufacturer/Factory & Trading Company
Number of Employees
156
Year of Establishment
2004-12-07