Manufacturing Technology: | Discrete Device |
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Material: | Sic |
Type: | N-type Semiconductor |
Samples: |
SIC Mosfet
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: | |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
Features |
Higher System Efficiency
|
Reduced Cooling Requirements
|
Increased Power Density
|
Increased System Switching Frequency
|
Applications |
Power Supplies |
High Voltage DC/DC Converters |
Motor Drives |
Switch Mode Power Supplies |
Pulsed Power applications |
PARAMETER | SYMBOL | VALUE | UNIT | |||
Drian-to-Source Voltage | VDSS | 1200 | V | |||
Gate-to-Source Voltage max | VGSS | -10/+22 | V | |||
Gate-to-Source Voltage max | VGSS | -4/+18 | V | |||
Continuous Drain Current |
VGS=20V,TC=25ºC
|
67 | A | |||
VGS=20V,TC=100ºC
|
48 | A | ||||
Pulsed Drain Current | ID(PULSE) | 100 | A | |||
Power Dissipation | Tj=175ºC | PD | 319 | W | ||
TC=25ºC | PD | W | ||||
Junction Temperature Range | Tj | -55~175 | ºC | |||
Storage Temperature Range | Tstg | -55~175 | ºC |
Parameter | Symbol | Rating | Unitº |
Thermal Resistance,Junction to Case-sink | RthJC | 0.47 | ºC/W |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DCCF040M120G2C
|
TO-247-4L |
DCCF040M120G2C
|
Pb-free | Tube | 300/box |
Suppliers with verified business licenses