Manufacturing Technology: | Discrete Device |
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Material: | Metal-Oxide Semiconductor |
Type: | N-type Semiconductor |
Samples: |
Mosfet
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: | |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
PARAMETER | SYMBOL | VALUE | UNIT | ||
Maximum Drian-Source DC Voltage | VDSS | 30 | V | ||
Maximum Gate-Drain Voltage | VGSS | ±20 | V | ||
Drain Current(continuous) | ID(T=25ºC) | 110 | A | ||
(T=100ºC) | 78 | A | |||
Drain Current(Pulsed) | IDM | 440 | A | ||
Single Pulse Avalanche Energy | EAS | 870 | mJ | ||
Total Dissipation | Ta=25ºC | Ptot | 1.25 | W | |
TC=25ºC | Ptot | 107 | W | ||
Junction Temperature | Tj | -55~175 | ºC | ||
storage Temperature | Tstg | -55~175 | ºC |
Features |
Fast Switching |
Low ON Resistance |
Low Gate Charge |
Low Reverse Transfer Capacitances |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Power switching applications |
Hard Switched and High Frequency Circuits |
Electric Tools |
Automotive Electronics |
Uninterruptible Power Supply. |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
110N03 | TO-220C | 110N03 | Pb-free | Tube | 1000/box |
B110N03 | TO-251 | B110N03 | Pb-free | Tube | 3000/box |
D110N03 | TO-252 | D110N03 | Pb-free | Tube | 2500/box |
Suppliers with verified business licenses