Manufacturing Technology: | Discrete Device |
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Material: | Metal-Oxide Semiconductor |
Type: | P-type Semiconductor |
Samples: |
Mosfet
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: | |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
PARAMETER | SYMBOL | VALUE | UNIT | ||
DH066N06D
|
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Drian-to-Source Voltage | VDSS | 60 | V | ||
Gate-to-Source Voltage | VGSS | ±20 | V | ||
Drain Current(continuous) | ID(T=25ºC) | 100 | A | ||
(T=100ºC) | 63 | A | |||
Drain Current(Pulsed) | IDM | 400 | A | ||
Single Pulse Avalanche Energy | EAS | 361 | mJ | ||
Total Dissipation | Ta=25ºC | Ptot | 1.7 | W | |
TC=25ºC | Ptot | 113 | W | ||
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Features |
Fast Switching |
Low ON Resistance |
Low Gate Charge |
Low Reverse Transfer Capacitances |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Power switching applications |
Inverter management system |
Electric tools |
Automotive electronics |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DH066N06D
|
TO-252B |
DH066N06D
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Pb-free | REEL | 5000/box |
Suppliers with verified business licenses