Insulated Gate Bipolar Transistor Dhg20t65D IGBT

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DHG20T65D
• Package: to-220f
• Application: Aircondition, Weldin, UPS
• Model: Dhg20t65D
• Batch Number: 2022
• Brand: Wxdh
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	RATING		UNIT
Collector-Emitter Voltage		VCES	650		V
Gate- Emitter Voltage		VGES	±20		V
Collector Current		IC(T=25ºC)	40		A
Collector Current		(Tc=100ºC)	20		A
Pulsed Collector Current		ICM	60		A
Diode Continuous Forward Current		IF @TC = 100 °C	20		A
Diode Maximum Forward Current		IFM	60		A
Total Dissipation	TC=25ºC	PD	96		W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

FS Trench Technology, Positive temperature coefficient

Extremely enhanced avalanche capability

Low saturation voltage: VCE(sat), typ = 1.9V
@ IC =20A and TC = 25°C

Applications

Motor Control

PFC

UPS

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
G20T65D	TO-220F	G20T65D	Pb-free	Tube	1000/box