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20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F

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  • 6 yrs

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Product Highlights

  • High Voltage Rating: Collector-Emitter Voltage up to 650V for robust performance.
  • Advanced Trench Technology: Features FS Trench technology with positive temperature coefficient.
  • Low Saturation Voltage: Typical VCE(sat) of 1.9V ensures high efficiency and low loss.
  • Enhanced Avalanche Capability: Extremely enhanced avalanche capability for improved reliability.
  • OEM and ODM Services: Customization available for brand and manufacturing processes.
  • RoHS Compliant: Product meets RoHS standards for environmental safety.

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Product Images of 20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F

20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F pictures & photos
20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F pictures & photos
20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F pictures & photos
20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F pictures & photos
20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F pictures & photos
20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F pictures & photos
20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
  • 20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
  • 20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
    20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
  • 20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
    20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
  • 20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
    20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
  • 20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
    20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
  • 20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
    20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
  • 20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
    20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F

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Product Description

PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage VCES 650 V
Gate- Emitter Voltage VGES ±20 V
Collector Current IC(T=25ºC) 40 A
Collector Current  (Tc=100ºC) 20 A
Pulsed Collector Current ICM 60 A
Diode Continuous Forward Current IF @TC = 100 °C 20 A
Diode Maximum Forward Current IFM 60 A
Total Dissipation TC=25ºC PD 96 W
Junction Temperature Tj -55~150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Extremely enhanced avalanche capability
Low saturation voltage: VCE(sat), typ = 1.9V
@ IC =20A and TC = 25°C
Applications
Motor Control
PFC
UPS
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
G20T65D TO-220F G20T65D Pb-free Tube 1000/box
 

 

20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F

20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F

20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F

20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F

About the Supplier

This supplier has been audited by SGS. Verify the report on the official SGS website with ID "QIP-ASR2441356". Items marked "verified" are certified.

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Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd

About Our Factory & Business Background

verified Business Type
Manufacturer/Factory & Trading Company
Address
No. 88 Zhongtong Road, Shuofang Industry Park, New District, Wuxi, Jiangsu, China
verified Plant Area
18862 square meters
verified Number of Employees
234
verified Registered Capital
81,500,000 RMB
verified Terms of Payment
LC, T/T, D/P, PayPal, Western Union, Small-amount payment
verified International Commercial Terms(Incoterms)
FOB, CIF, CFR
verified Average Lead Time
Peak Season Lead Time: one month
Off Season Lead Time: one month
verified Nearest Port
Shanghai Port

Our Production Capability & Technical Expertise

Main Products
Mosfets, Diodes, IGBT, Transistor, Thyristor
verified Production Machines
Cutting Machine, Testing and Sorting Machine, Wire Banding Machine, Die Attach Machine, Molding Plastic Machine, Oven
verified ODM Service Available
Yes
verified OEM Service Available
Yes
verified R&D Engineers
35 people
verified Test Reports for Raw Materials
RoHS, Reach
verified Own Brand
Yes

Our Industry Experience & Global Business Record

verified Year of Establishment
2004-12-07
Export Year
2010-03-11
verified Main Markets
South Asia
verified Number of Foreign Trading Staff
2

Our Certifications, Standards & Industry Recognition

verified Management System Certification
IATF16949

FAQ

What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCES) is 650V.
Is this product RoHS compliant?
Yes, the product is RoHS compliant and Pb-free.
What packaging type is used?
The package type is TO-220F, with 1000 units per tube.
Does the manufacturer offer OEM services?
Yes, OEM and ODM services are available for this product.
What are the main applications for this IGBT?
Main applications include motor control, PFC, UPS, air conditioning, and welding.

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