Manufacturing Technology: | Discrete Device |
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Material: | Metal-Oxide Semiconductor |
Type: | N-type Semiconductor |
Samples: |
Mosfet
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: | |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
PARAMETER | SYMBOL | VALUE | UNIT | |
Drian-to-Source Voltage | VDSS | 500 | V | |
Gate-to-Source Voltage | VGSS | ±30 | V | |
Drain Current(continuous) | (Tc=25ºC) | 10 | ||
(Tc=100ºC) | 6.3 | A | ||
Drain Current(Pulsed) | IDM | 40 | A | |
Single Pulse Avalanche Energy | EAS | 600 | mJ | |
Total Dissipation | Ta=25ºC | Ptot | 0.32 | W |
TC=25ºC | Ptot | 40 | W | |
Junction Temperature | Tj | -55~150 | ºC | |
storage Temperature | Tstg | -55~150 | ºC |
Features |
Fast Switching |
ESD improved capability
|
Low ON Resistance |
Low Gate Charge |
Low Reverse Transfer Capacitances |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Used in various power switching circuit for system
miniaturization and higher efficiency.
|
Used in various power switching circuit for system
miniaturization and higher efficiency.
|
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
F10N50
|
To-220F |
F10N50
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Pb-free | Reel | 1000/box |
Suppliers with verified business licenses