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| Customization: | Available |
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| Manufacturing Technology: | Discrete Device, Discrete Device |
| Type: | N-Type Semiconductor, N-type Semiconductor |
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| PARAMETER | SYMBOL | VALUE | UNIT | |
| Drian-to-Source Voltage | VDSS | 150 | V | |
| Gate-to-Source Voltage | VGSS | ±20 | V | |
| Drain Current(continuous) | (Tc=25ºC) | 175 | ||
| (Tc=100ºC) | 124 | A | ||
| Drain Current(Pulsed) | IDM | 699 | A | |
| Single Pulse Avalanche Energy | EAS | 1406 | mJ | |
| Total Dissipation | Ta=25ºC | Ptot | 2.3 | W |
| TC=25ºC | Ptot | 300 | W | |
| Junction Temperature | Tj | -55~175 | ºC | |
| storage Temperature | Tstg | -55~175 | ºC | |
| Features |
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AEC-Q101 qualified
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Extremely low on-resistance RDS(on)
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| Low Reverse Transfer Capacitances |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
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Pb-Free plating / Halogen-Free / RoHS compliant
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| Applications |
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Motor control and drive
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Charge/Discharge for Battery Management System
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Synchronous Rectifier for SMPS
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| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
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DSU047N15NA
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TOLL |
DSU047N15NA
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Pb-free | REEL | 1800/box |
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