3A 800V N-Channel Enhancement Mode Power Mosfet F3n80 to-220f

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: F3N80
• Package: to-220f
• Application: Power Switching Circuit
• Model: F3n80
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 800V
• Current: 3A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			3N80/I3N80/ E3N80/B3N80/D3N80	F3N80
Maximum Drian-Source DC Voltage		VDS	800		V
Maximum Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	3		A
		(T=100ºC)	1.9		A
Drain Current(Pulsed)		IDM	12		A
Single Pulse Avalanche Energy		EAS	120		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	75	30	W
Junction Temperature		Tj	150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

Low ON Resistance

Low Gate Charge

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Used in Various Power Switching Circuit for System
Miniaturization and Higher Efficiency.

Power Switch Circuit of Adaptor and Charger.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
3N80	TO-220C	3N80	Pb-free	Tube	1000/box
F3N80	TO-220F	F3N80	Pb-free	Tube	1000/box
B3N80	TO-251	B3N80	Pb-free	Tube	3000/box
D3N80	TO-252	D3N80	Pb-free	Tape & Reel	2500/box
I3N80	TO-262	I3N80	Pb-free	Tube	1000/box
E3N80	TO-263	E3N80	Pb-free	Tape & Reel	800/box