18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L

Product Details
Customization: Available
Application: Solar Inverters
Batch Number: 2022
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Number of Employees
234
Year of Establishment
2004-12-07
  • 18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L
  • 18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L
  • 18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L
  • 18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L
  • 18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L
  • 18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L
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Basic Info.

Model NO.
DCC160M120G1
Manufacturing Technology
Discrete Device
Material
Sic
Model
Dcc160m120g1
Package
to-247-3L
Type
N-Type Semiconductor
Voltage
1200V
Cirrent
18A
Brand
Wxdh
Transport Package
Tube
Specification
Sic
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L
5A 1700V N-channel SIC Power MOSFET
 
Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required.
18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L
 
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL VALUE UNIT
 
Drian-to-Source Voltage VDSS 1200 V
Gate-to-Source Voltage max VGSS -10/+25 V
Gate-to-Source Voltage max VGSS -5/+20 V
Continuous Drain Current
VGS=20V,TC=25ºC
18 A
VGS=20V,TC=100ºC
12 A
Pulsed Drain Current ID(PULSE) 40 A
Power Dissipation Tj=150ºC PD 125 W
TC=25ºC PD W
Junction Temperature Range Tj -55~150 ºC
Storage Temperature Range Tstg -55~150 ºC
 
4.2 Thermal Characteristics
Parameter Symbol Rating Unitº
Thermal Resistance,Junction to Case-sink RthJC 1.8 ºC/W

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DCC160M120G1
TO-247-3L
DCC160M120G1
Pb-free Tube 1800/box
 18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L

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