36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247

• Customization: Available
• Voltage: 1200V
• Current: 36A
• Model NO.: DHC1M080120W
• Type: N-type Semiconductor
• Material: Sic
• Package: to-247
• Application: Solar Inverters
• Model: Dhc1m080120W
• Batch Number: 2022
• Brand: Wxdh
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541100000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 36A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required. It is qualified
and manufactured on the productive 6 inch SiC line in
China fully owned by DongHai Semiconducor.
 

Features

Higher System Efficiency

Reduced Cooling Requirements

Increased Power Density

Increased System Switching Frequency

Applications

Power Supplies

High Voltage DC/DC Converters

Motor Drives

Switch Mode Power Supplies

Pulsed Power applications

 

PARAMETER			SYMBOL	VALUE		UNIT
Drian-to-Source Voltage			VDSS	1200		V
Gate-to-Source Voltage max			VGSS	-10/+25		V
Gate-to-Source Voltage max			VGSS	-5/+20		V
Continuous Drain Current			ID TC=25ºC	36		A
			TC=100ºC	24		A
Pulsed Drain Current			IDM	80		A
Power Dissipation		Tj=150ºC	Ptot	192		W
		TC=25ºC	Ptot			W
Junction Temperature Range			Tj	-55~150		ºC
Storage Temperature Range			Tstg	-55~150		ºC

 
4.2 Thermal Characteristics

Parameter	Symbol	Rating	Unitº
Thermal Resistance,Junction to Case-sink	RthJC	0.6	ºC/W
Thermal Resistance,Junction to Ambient	RthJA	40	ºC/W

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DHC1M080120N	TO-3PN	DHC1M080120N	Pb-free	Tube	300/box
DHC1M080120W	TO-247	DHC1M080120W	Pb-free	Tube	300/box