1200V 5A Sic Schottky Barrier Diode Dcd05D120g3 to-252

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DCD05D120G3
• Package: to-252
• Application: Switching Mode Power Supplies
• Model: Dcd05D120g3
• Batch Number: 2023
• Brand: Wxdh
• Voltage: 1200V
• Current: 5A
• Transport Package: Reel
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541100000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

25A 1700V SiC Schottky Barrier Diode

1 Description

SiC Series products family offers state of the art performance. It is designed for high

frequency applications where high efficiency and high reliability are required.

 

Features

high voltage

Zero Reverse Recovery Current

Zero Forward Recovery Voltage

Positive Temperature Coefficient on VF

175ºC Operating Junction Temperature

Applications

Switching Mode Power Supplies

Power Factor Correction

Motor drive, PV inverter, wind power station

 

PARAMETER			SYMBOL	VALUE	UNIT
Peak Repetitive Reverse Voltage			VRRM	1200	V
Working Peak Reverse Voltage			VRWM	1200	V
DC Blocking Voltage			VR	1200	V
Forward Current		(Tc≤25ºC)	IF	19
		(Tc≤135ºC)		9.5	A
		(Tc≤161ºC)		5
Repetitive Peak Forward Surge Current (t=8.3ms)			IFSM	50	A
Power dissipation			Ptot	130	W
Operating Junction Temperature Range			Tj	-55~175	ºC
Storage Temperature Range			Tstg	-55~175	ºC
Maximum case Temperature			Tc	161	ºC

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name
DCD05D120G3	TO-252	DCD05D120G3