| Customization: | Available |
|---|---|
| Application: | Power Switching, Converters, Full Bridge Control |
| Batch Number: | 2022 |
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| Description |
| These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. |
| Features |
| Low on resistance |
| Low gate charge |
| Fast switching |
| Low reverse transfer capacitances |
| 100% single pulse avalanche energy test |
| 100% ΔVDS test |
| Applications |
| Power switching applications |
| Inverter power management system |
| Power tool control |
| Automotive electronics applications |
| PARAMETER | SYMBOL | RATING | UNIT | ||
| DH027N06/DHI027N06/DHE1027N06/DHB027N06/DHD027N06 | DHF027N06 | ||||
| Drian-to-Source Voltage | VDSS | 68 | V | ||
| Gate-to-Source Voltage | VGSS | ±25 | V | ||
| Continuous Drain Current | ID TC=25ºC | 210 | A | ||
| TC=100ºC | 133 | A | |||
| Pulsed Drain Current | IDM | 840 | A | ||
| Single Pulse Avalanche Energy | EAS | 800 | mJ | ||
| Power Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
| TC=25ºC | Ptot | 220 | 60 | W | |
| Isolation Voltage | VISO | / | 2500 | V | |
| Junction Temperature Range | Tj | -55~175 | ºC | ||
| Storage Temperature Range | Tstg | -55~175 | ºC | ||
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DH027N06 | TO-220C | DH027N06 | Pb-free | Tube | 1000/box |
| DHF027N06 | TO-220F | DHF027N06 | Pb-free | Tube | 1000/box |
| DHB027N06 | TO-251 | DHB027N06 | Pb-free | Tube | 3000/box |
| DHD027N06 | TO-252 | DHD027N06 | Pb-free | Tape & Reel | 2500/box |
| DHI027N06 | TO-262 | DHI027N06 | Pb-free | Tube | 1000/box |
| DHE027N06 | TO-263 | DHE027N06 | Pb-free | Tape & Reel | 800/box |
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