20A 650V Sic Schottky Barrier Diode Dce20d65g4 to-263

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DCE20D65G4
• Package: to-263
• Application: Switching Mode Power Supplies
• Model: Dce20d65g4
• Batch Number: 2023
• Brand: Wxdh
• Voltage: 650V
• Current: 20A
• Transport Package: Reel
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541100000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 8A 650V SIC SchottkyBarrierDiode
1 Description
SIC Series products family offers state of the art performance. It is designed for high
frequency applications where high efficiency and high reliability are required.

 

Features

Low power loss

Zero Reverse Recovery Current

Zero Forward Recovery Voltage

Positive Temperature Coefficient on VF

175ºC Operating Junction Temperature

Applications

Switching Mode Power Supplies

Power Factor Correction

Motor drive, PV inverter, wind power station

 

PARAMETER			SYMBOL	VALUE	UNIT
Peak Repetitive Reverse Voltage			VRRM	650	V
Working Peak Reverse Voltage			VRWM	650	V
DC Blocking Voltage			VR	650	V
Average Rectified Forward Current		(Tc≤135ºC)	IF(AV)	30	A
		(Tc≤154ºC)		20	A
Nonrepetitive Peak Surge Current		t=8.3ms	IFSM	160	A
Power dissipation			Ptot	214	W
Operating Junction Temperature Range			Tj	-55~175	ºC
Storage Temperature Range			Tstg	-55~175	ºC

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name
DCE20D65G4	TO-263	DCE20D65G4