![1200V 600A 62mm IGBT Module Dgb600h120L2t](//www.micstatic.com/athena/img/transparent.png)
![1200V 600A 62mm IGBT Module Dgb600h120L2t](//www.micstatic.com/athena/img/transparent.png)
![1200V 600A 62mm IGBT Module Dgb600h120L2t](//www.micstatic.com/athena/img/transparent.png)
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard
Features |
FS Trench Technology, Positive temperature
coefficient |
Low saturation voltage: VCE(sat), typ = 2.25V
@ IC =75A and Tj = 25°C |
Extremely enhanced avalanche capability |
Applications |
Welding |
UPS |
Three-leve Inverter |
AC and DC servo drive amplifier |
Type |
VCE |
IC |
VCEsat,Tj=25ºC |
Tjop |
Package |
DGB600H120L2T
|
1200V |
600A (Tj=100ºC)
|
1.7V (Typ)
|
175ºC |
62MM |
Electrical Characteristics
5.1Absolute Maximum Ratings (IGBT) (Tc=25ºC,unless otherwise specified)
PARAMETER |
SYMBOL |
VALUE |
UNIT |
|
|
|
Collector-to-Emitter Voltage |
VCE |
1200 |
V |
Gate-to-Emitter Voltage |
VGE |
±20 |
V |
DC Collector current |
Ic Tj=100ºC |
600 |
A |
Pulsed Collector Current #1 |
ICM |
1200 |
A |
5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)
PARAMETER |
SYMBOL |
VALUE |
UNIT |
|
|
|
Peak Repetitive Reverse Voltage |
VRRM |
1200 |
V |
DC Blocking Voltage |
VR |
1200 |
V |
Average Rectified Forward Current |
IF(AV) |
600 |
A |
Repetitive Peak Surge Current |
IFRM |
1200 |
A |
5.53IGBT Module
PARAMETER |
SYMBOL |
VALUE |
UNIT |
|
|
|
Junction Temperature Range |
Tjmax |
-45~175 |
ºC |
Operating Junction Temperature |
Tjop |
-45~150 |
ºC |
Storage Temperature Range |
Tstg |
-45~120 |
ºC |
Isolation Voltage RMS,f=50Hz,t=1min |
VISO |
4000 |
A |
5.4Thermal Characteristics(IGBT Module)
PARAMETER |
SYMBOL |
VALUE |
UNIT |
|
Thermal Resistance Junction to Case |
IGBT RthJC |
0.054 |
ºC/W |
Diode RthJC |
0.08 |
ºC/W |