High Voltage Mosfet Dje660n80e to-263

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DJE660N80E
• Package: to-263
• Application: Power Switching Circuit
• Model: Dje660n80e
• Batch Number: 2022
• Brand: Wxdh
• Voltage: 800V
• Current: 8A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE	UNIT
Maximum Drian-Source DC Voltage		VDS	800	V
Maximum Gate-Drain Voltage		VGS	±20	V
Drain Current(continuous)		ID(T=25ºC)	8	A
		(T=100ºC)	5.1	A
Drain Current(Pulsed)		IDM	24	A
Single Pulse Avalanche Energy		EAS	90	mJ
Total Dissipation	Ta=25ºC	Ptot	2	W
	TC=25ºC	Ptot	78	W
Junction Temperature		Tj	-55~150	ºC
storage Temperature		Tstg	-55~150	ºC

 

Features

Very Low FOM (RDS(on) X Qg )

Built-in ESD Diode

Low on resistance(Rdson≤2.3Ω)

Low gate charge(Typ: 24nC)

Low reverse transfer capacitances(Typ: 5.5pF)

100% Single Pulse Avalanche Energy Test

100% ΔVDS Test

Applications

Power factor correction(PFC).

Switched mode power supplies(SMPS).

Uninterruptible power supply(UPS).

AC to DC Converters

Telecom

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DJE660N80E	TO-263	DJE660N80E	Pb-free	REEL	800/box