1200V IGBT Module Dgc40c120m2t

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DGC40C120M2T
• Package: Module
• Application: Welding, UPS, Three-Leve Inverter
• Model: Dgc40c120m2t
• Batch Number: 2022
• Brand: Wxdh
• Voltage: 1200V
• Current: 40A
• Transport Package: Econopack2
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 59.00cm * 25.00cm * 60.00cm
• Package Gross Weight: 80.000kg

Product Description

 40A 1200V PIM in one-package

1 Description
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.
 

Features

Low gate charge

Excellent switching speed

Easy paralleling capability due to positive temperature
Coefficient in VCEsat

Tsc≥10μs

Fast recovery full current anti-parallel diode

Low VCEsat

Applications

Welding

UPS

Three-leve Inverter

AC to DC Converters

AC and DC servo drive amplifier

 

Type	VCE	IC	VCEsat,Tj=25ºC	Tjop	Package
DGC40C120M2T	1200V	40A (Tj=100ºC)	1.7V (Typ)	150ºC	EconOPACK2

Electrical Characteristics
5.1 Absolute Maximum Ratings (IGBT-inverter/IGBT-brake) (Tc=25ºC,unless otherwise specified)

PARAMETER			SYMBOL	VALUE		UNIT
Collector-to-Emitter Voltage			VCE	1200		V
Gate-to-Emitter Voltage			VGE	±30		V
DC Collector current			Ic Tj=25ºC	80		A
			Tj=100ºC	40		A
Pulsed Collector Current #1			ICM	160		A

 

5.2 Absolute Maximum Ratings (Diode-inverter) (Tc=25ºC,unless otherwise specified)

PARAMETER			SYMBOL	VALUE		UNIT
Peak Repetitive Reverse Voltage			VRRM	1200		V
DC Blocking Voltage			VR	1200		V
Average Rectified Forward Current			IF(AV)	40		A
Repetitive Peak Surge Current			IFRM	60		A
Nonrepetitive Peak Surge Current(single) /tp=1.0ms			IFSM	400		A

5.3 Absolute Maximum Ratings (Diode-rectifier) (Tc=25ºC,unless otherwise specified)

PARAMETER			SYMBOL	VALUE		UNIT
Peak Repetitive Reverse Voltage			VRRM	1600		V
Reverse does not repeat peak voltage / IRRM=5μA			VRSM	2000		V
Average Rectified Forward Current			IF(AV)	25		A
Nonrepetitive Peak Surge Current(single) / tp=10ms			IFSM	320		A
I2t-value  / tp=10ms, sin 180°			I2t	512		A2s

5.4 Absolute Maximum Ratings (Diode-brake) (Tc=25ºC,unless otherwise specified)

PARAMETER			SYMBOL	VALUE		UNIT
Peak Repetitive Reverse Voltage			VRRM	1200		V
DC Blocking Voltage			VR	1200		V
Average Rectified Forward Current			IF(AV)	20		A
Repetitive Peak Surge Current			IFRM	30		A
Nonrepetitive Peak Surge Current(single) /tp=1.0ms			IFSM	300		A

5.5 IGBT Module

PARAMETER			SYMBOL	VALUE		UNIT
Junction Temperature Range(inverter/brake)			Tjmax	-45~175		ºC
Junction Temperature Range(Diode-rectifier)			Tjmax	-45~150		ºC
Operating Junction Temperature			Tjop	-45~150		ºC
Storage Temperature Range			Tstg	-45~150		ºC
Isolation Voltage RMS,f=50Hz,t=1min			VISO	2500		A