Manufacturing Technology: | Discrete Device |
---|---|
Material: | Metal-Oxide Semiconductor |
Type: | N-type Semiconductor |
Customization: |
---|
Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
---|
Payment Method: | |
---|---|
Initial Payment Full Payment |
Currency: | US$ |
---|
Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
---|
Suppliers with verified business licenses
PARAMETER | SYMBOL | VALUE | UNIT | |
Maximum Drian-Source DC Voltage | VDS | 650 | V | |
Maximum Gate-Drain Voltage | VGS | ±20 | V | |
Drain Current(continuous) | ID(T=25ºC) | 80 | A | |
(T=100ºC) | 40 | A | ||
Drain Current(Pulsed) | IDM | 120 | A | |
Single Pulse Avalanche Energy | EAS | 90 | mJ | |
Total Dissipation | Ta=25ºC | Ptot | 417 | W |
TC=25ºC | Ptot | 208 | W | |
Junction Temperature | Tj |
-55~175
|
ºC | |
storage Temperature | Tstg | -55~175 | ºC |
Features |
FS Trench Technology, Positive temperature coefficient
|
Low saturation voltage: VCE(sat), typ = 1.8V@ IC =40A and Tj = 25°C
|
Extremely enhanced avalanche capability |
Applications |
Welding |
UPS |
Three-level Inverter |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
G40T65LBBN
|
TO-3PN |
G40T65LBBN
|
Pb-free | PIPE | 1000/box |
Suppliers with verified business licenses