100A 1200V Half Bridge IGBT Module

• Manufacturing Technology: Trench and Fieldstop Technology Design
• Material: Compound Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DGA100H120M2T
• Package: 34mm
• Application: Welding, UPS, Three-Leve Inverter
• Model: Dga100h100m2t
• Batch Number: 2023
• Brand: Wxdh
• Voltage: 1200V
• Current: 100A
• Transport Package: Box
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 59.00cm * 25.00cm * 60.00cm
• Package Gross Weight: 80.000kg

Product Description

 
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.

Features

FS Trench Technology, Positive temperature
coefficient

Low saturation voltage: VCE(sat), typ = 1.9V
@ IC =100A and Tj = 25°C

Extremely enhanced avalanche capability

Applications

Welding

UPS

Three-leve Inverter

AC to DC Converters

AC and DC servo drive amplifier

 

Type	VCE	IC	VCEsat,Tj=25ºC	Tjop	Package
DGA100H120M2T	1200V	100A (Tj=100ºC)	1.9V (Typ)	175ºC	34MM

Electrical Characteristics
5.1Absolute Maximum Ratings (IGBT) (Tc=25ºC,unless otherwise specified)

PARAMETER			SYMBOL	VALUE		UNIT
Collector-to-Emitter Voltage			VCE	1200		V
Gate-to-Emitter Voltage			VGE	±30		V
DC Collector current			Ic Tj=25ºC	200		A
			Tj=100ºC	100		A
Pulsed Collector Current #1			ICM	800		A

 

5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)

PARAMETER			SYMBOL	VALUE		UNIT
Peak Repetitive Reverse Voltage			VRRM	1200		V
DC Blocking Voltage			VR	1200		V
Average Rectified Forward Current			IF(AV)	100		A
Repetitive Peak Surge Current			IFRM	200		A
Nonrepetitive Peak Surge Current(single) /tp=1.0ms			IFSM	600		A

5.53IGBT Module

PARAMETER			SYMBOL	VALUE		UNIT
Junction Temperature Range			Tjmax	-45~175		ºC
Operating Junction Temperature			Tjop	-45~150		ºC
Storage Temperature Range			Tstg	-45~150		ºC
Isolation Voltage RMS,f=50Hz,t=1min			VISO	4000		A

5.4Thermal Characteristics(IGBT Module)

PARAMETER						SYMBOL	VALUE		UNIT
Thermal Resistance Junction to Case						IGBT RthJC	0.28		ºC/W
						Diode RthJC	0.40		ºC/W