Manufacturing Technology: | Discrete Device |
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Material: | Silicon |
Type: | N-type Semiconductor |
Package: | to-263/3pn |
Application: | Switching Power Supply |
Model: | Mbr40200CT |
Samples: |
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Customization: |
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Features |
High junction temperature capabiliy |
Low leakage current |
Low thermal resistance |
High frequency operation |
Avalanche specification |
Applications |
Switching Power Supply |
Power Switching Circuits |
General Purpose |
PARAMETER | SYMBOL | VALUE | UNIT | ||
Peak Repetitive Reverse Voltage | VRRM | 200 | V | ||
RMS Reverse Voltage | VR(RMS) | 160 | V | ||
DC Blocking Voltage | VR | 200 | V | ||
Average Rectified Forward Current(single) | TC=120ºC |
IF(AV) | 20 | A | |
Average Rectified Forward Current(double) | 40 | A | |||
Repetitive Peak Surge Current(single) | IFRM | 30 | A | ||
Nonrepetitive Peak Surge Current(single) | t=8.3ms | IFSM | 250 | A | |
Avalanche Energy(single) | L=1mH | EAS | 20 | mJ | |
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
MBR40200CT | TO-263 | MBR10200CT | Pb-free | Tube | 1000/box |
MBR40200CT | TO-220 | MBR10200CT | Pb-free | Tube | 1000/box |
MBR40200NCT | TO-3PN | MBR40200NCT | Pb-free | Tube | 300/box |
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