• 18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p
  • 18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p
  • 18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p
  • 18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p
  • 18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p
  • 18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p

18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p

Manufacturing Technology: Discrete Device
Material: Sic
Type: N-type Semiconductor
Samples:
US$ 0.15/Piece 1 Piece(Min.Order)
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Mosfet
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18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p pictures & photos
18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

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Basic Info.

Model NO.
DHC1M160120D
Package
to-3p
Application
Solar Inverters
Model
Dhc1m160120d
Batch Number
2022
Brand
Wxdh
Voltage
1200V
Current
18A
Transport Package
Tube
Specification
Sic
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p
18A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high
efficiency and high reliability are required. It is qualified and manufactured on the productive 6 inch SiC line in China
fully owned by DongHai Semiconducor.
 18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p
Features
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitance
Easy to Parallel and Simple to Drive
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL VALUE UNIT
     
Drian-to-Source Voltage VDSS 1200 V
Gate-to-Source Voltage max VGSS -10/+25 V
Gate-to-Source Voltage max VGSS -5/+20 V
Continuous Drain Current ID TC=25ºC 18 A
TC=100ºC 12 A
Pulsed Drain Current IDM 40 A
Power Dissipation Tj=150ºC Ptot 125 W
TC=25ºC Ptot W
Junction Temperature Range Tj -55~150 ºC
Storage Temperature Range Tstg -55~150 ºC
 
4.2 Thermal Characteristics
Parameter Symbol Rating Unitº
Thermal Resistance,Junction to Case-sink RthJC 0.9 ºC/W
Thermal Resistance,Junction to Ambient RthJA 40 ºC/W

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DHC1M160120D TO-3P DHC1M160120D Pb-free Tube 300/box
DHC1M160120B TO-247 DHC1M160120B Pb-free Tube 300/box
 18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p

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From payment to delivery, we protect your trading.
18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p pictures & photos
18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

Suppliers with verified business licenses

Secured Trading Service
Manufacturer/Factory & Trading Company
Number of Employees
156
Year of Establishment
2004-12-07