7A 800V N-Channel Enhancement Mode Power Mosfet 7n80 to-220

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: 7N80
• Package: to-220
• Application: LED Power Switch Circuit,Electronic Ballast
• Model: 7n80
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 800V
• Current: 7A
• Transport Package: by Sea, Packing
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 

PARAMETER		SYMBOL	VALUE		UNIT
			7N80/I7N80/E7N80	F7N80
Maximum Drian-Source DC Voltage		VDS	800		V
Maximum Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	7		A
		(T=100ºC)	4		A
Drain Current(Pulsed)		IDM	28		A
Single Pulse Avalanche Energy		EAS	150		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	120	48	W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

Low ON Resistance

Low Gate Charge

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

 

Applications

LED power switch circuit

Electronic ballast

ATX power

High voltage H bridge PWM motor drive

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
7N80	TO-220C	7N80	Pb-free	Tube	1000/box
F7N80	TO-220F	F7N80	Pb-free	Tube	1000/box
I7N80	TO-262	I7N80	Pb-free	Tube	1000/box
E7N80	TO-263	E7N80	Pb-free	Tape & Reel	800/box