Manufacturing Technology: | Discrete Device |
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Material: | Metal-Oxide Semiconductor |
Type: | N-type Semiconductor |
Samples: |
Mosfet
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: | |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
Features |
Fast switching |
Low on resistance(Rdson≤0.165Ω) |
Low gate charge(Typ: 50nC) |
Low reverse transfer capacitances(Typ: 3.5pF) |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Power factor correction(PFC). |
Switched mode power supplies(SMPS). |
Uninterruptible power supply(UPS). |
AC to DC Converters |
Telecom, SOLAR |
PARAMETER | SYMBOL | RATING | UNIT | |||
Drian-to-Source Voltage | VDSS | 650 | V | |||
Gate-to-Source Voltage | VGSS | ±30 | V | |||
Continuous Drain Current | ID TC=25ºC | 21 | A | |||
TC=100ºC | 13.2 | A | ||||
Pulsed Drain Current | IDM | 63 | A | |||
Single Pulse Avalanche Energy | EAS | 484 | mJ | |||
Power Dissipation | Ta=25ºC | Ptot | 3 | W | ||
TC=25ºC | Ptot | 151 | W | |||
Junction Temperature Range | Tj | -55~150 | ºC | |||
Storage Temperature Range | Tstg | -55~150 | ºC |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DHSJ21N65W
|
TO-220C |
DHSJ21N65W
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Pb-free | Tube | 300/box |
Suppliers with verified business licenses